ETCHING DEVICE

PURPOSE:To make it feasible to etch a wafer evenly by a method wherein multiple gas introducing holes penetrating an upper electrode are arranged so that the introduction of gas flowing along inner and outer periphery of a wafer may be controlled respectively. CONSTITUTION:Electrodes 2, 3 are oppositely arranged in a vacuum chamber 1 while reacting gas introduced from a tube 5 to be exhausted from multiple holes 4 further flow rate-controlled by controller 6 is finally introduced into the chamber 1 through numerous holes penetrating the electrodes 2. A wafer 8 carried on the electrode 3 and maintained in specified atmosphere by the introduced gas and exhaust may be etched by the gas transformed into plasma with high frequency voltage supplied for the electrode 2. In such a constitution, the internal etching of wafer 8 may be controlled easily and evenly under no influence of the exhaust holes 4 since the gas flow rate along inner and outer periphery of wafer 8 may be controlled respectively.