PHOTOELECTRON DEVICE

PURPOSE:To reduce the leakage failures in p-n junction parts by arranging electrodes on one of the main surfaces of a chip and coating the p-n junction parts in a peripheral part of the chip. CONSTITUTION:Over a main surface of a wafer 9, a passivation film 17 formed by a CVD method is arranged with excepting the openings for electrode contacts and the film 17 covers the groove walls composing etching grooves 18 surely. Accordingly, the p-n junction parts exposed to the grooves 18 are covered and protected by the film 17. Nextly electrodes 4 and 5 are formed on upper surface of pedestal parts 19 comprising channnels 10 present between the diffusion layers for contacts 15 and the grooves 18 by photolithography. Then, by etching a back surface of a substrate 3 of the wafer 9, the wafer 9 is cleaved at a cleavage plane and the wafer is divided at the positions designated by the dash and two dots line by making the layer 15 and the pedestal part 19 as a unit.