SEMICONDUCTOR ANALYZER

PURPOSE:To make it feasible to analyze highly miniaturized and concentrated LSI in the atmosphere by a method wherein the surface of LSI is irradiated with laser beams to detect any current fluctuation due to electrons and holes of an electron hole couple produced within a semiconductor. CONSTITUTION:A CMOS-LSI is implanted with GND potential and power supply voltage to be irradiated with laser beams. When a point (a) on the surface of LSI is irradiated with finely throttled laser beams, an electron(-)-hole(+) couple 7 is produced in an n-well 1 corresponding to the irradiated laser power. A part of electrons and holes herein produced are extinguished by recoupling process but most of the residual electrons flow in an n layer 6 reaching an outer terminal to be electron current Ie. On the other hand, most of the residual holes flow in a p layer 4 reaching another outer terminal to be hole current Ih. The amount of electron current Ie and hole current Ih produced corresponding to the laser beam irradiation may mainly depend upon the position of laser beam irradiation as well as the voltages in the n layer 6 and the p layer 7. Therefore, each position of laser beam irradiation, kind of diffusion and status of potential may be detected in terms of Ie and Ih.