PRESSURE-WELDING TYPE SEMICONDUCTOR DEVICE

PURPOSE:To contrive improvement in the electric characteristics, mechanical strength and reliability of the title semiconductor device by a method wherein a stepped continuous groove, which is shallowly formed on the side located close to the pressure-welded surface of the semiconductor device and deeply formed on the far side, is formed on the side face of the electrode stamp where a semiconductor element is pressure-welded, thereby enabling to make uniform the surface pressure distribution on the pressure-welded surface. CONSTITUTION:The cathode side of the semiconductor element 21 such as a diode and the like is pressure-welded with an electrode stamp 24. A groove 25 of the depth l1 at the position of height h1 of pressure-welded surface and of depth l2 at the position of height h2 in stepped form, is provided on the whole circumference of the side face of said electrode stamp 24. Load is added to the device constituted as above in axial direction (in the direction of lamination), and it is pressure-contacted. The maximum compressive stress can be lowered by 27% when compared with the rectangular groove by providing the stepped groove 25 on the side face of the electrode stamp 24 as above- mentioned.