APPARATUS FOR VAPOR-PHASE GROWTH OF SEMICONDUCTOR THIN FILM

PURPOSE:To prevent the contamination of the apparatus, to decrease the frequency of maintenance and to improve the operation rate of the apparatus, by attaching a substrate to a substrate table in the substrate exchanging chamber, transferring the substrate table to the reaction chamber, separating both chambers with a movable gas partition plate and growing a semiconductor film on the substrate. CONSTITUTION:The titled apparatus is composed of a reaction chamber 1 furnished with a raw material gas inlet port 2 and a delivery port 3, a substrate exchange chamber 7 attached to the delivery end of the reaction chamber 1 via a gate valve 6, a substrate table 12 movable between both chambers, and a movable gas partition plate 14 having a gap and placed between the substrate table 12 and the inner wall of the apparatus. The substrate table 12 and the partition plate 14 are transferred to the substrate exchange chamber 7, the gate valve 6 is closed, the substrate exchange port 10 is opened, a GaAs substrate 11 is attached to the substrate table 12, the exchange port 10 is closed, the purge gas inlet port 8 and the exhaust port 9 are opened to purge the space in the exchange chamber 7, the valve 6 is opened, the substrate 11 is transferred to the reaction chamber 1 by the supporting rod 13, etc., the partition plate 14 is placed between the exhaust port 8 and the valve 6, the raw material gas is introduced into the reaction chamber 1, the substrate 11 is heated with the RF coil 5, and a semiconductor film composed of GaAs is grown on the substrate 11.