THIN FILM FORMING DEVICE

PURPOSE:To eliminate the deterioration in withstand voltage performance with a simple structure and to improve the reliability of the title device by providing a gate valve between an ion source and a vacuum vessel not to expose the ion source to the atmosphere even when the vacuum vessel is opened....

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Bibliographische Detailangaben
Hauptverfasser:	SATO TADASHI, OHATA KOKICHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE:To eliminate the deterioration in withstand voltage performance with a simple structure and to improve the reliability of the title device by providing a gate valve between an ion source and a vacuum vessel not to expose the ion source to the atmosphere even when the vacuum vessel is opened. CONSTITUTION:A gate valve 12 is provided between an ion source 6 and a vacuum vessel 1 with a gasket 10 on the ion source side and a sheet 11 on the vessel 1 side. The vessel 1 is evacuated from an discharge pipe 13 by an evacuation device. The gate valve 12 is closed when the vessel 1 is opened, hence the ion source 6 is completely unaffected and a highly reliable thin film forming device having excellent withstand voltage performance can be obtained. The operations such as conditioning can be dispensed with. Besides, the vessel 1 is preferably shaped in the form of a cylinder or a box or a sphere.