N-FORM DIFFUSION METHOD OF ZNSE

PURPOSE:To obtain an N-form crystal of ZnSe having a strong blue light emission intensity, by heat-treating a ZnSe crystal in a Zn-Tl solution. CONSTITUTION:A ZnSe crystal 4 heat-treated in Zn at 950-1,000 deg.C for about several hours - one day to reduce impurities, 50mol% Te 5 and Zn 6 are put in...

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Bibliographische Detailangaben
Hauptverfasser:	OTSUKA AKIRA, KAGAYA SUSUMU, MARUYAMA TAKESHI, SAKATA MASAAKI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE:To obtain an N-form crystal of ZnSe having a strong blue light emission intensity, by heat-treating a ZnSe crystal in a Zn-Tl solution. CONSTITUTION:A ZnSe crystal 4 heat-treated in Zn at 950-1,000 deg.C for about several hours - one day to reduce impurities, 50mol% Te 5 and Zn 6 are put in a quartz ampul 7, and the interior thereof is evacuated to seal the mouth. The ampul 7 is then put in a furnace core tube 10 through a supporting rod 8, and a current is passed through a heater 11 to heat and melt Tl and Zn. The ZnSe crystal 4 is then dipped in the Zn-Tl solution and heat-treated at >=1,000 deg.C for >=10hr.