ACTIVATED PROCESS GAS CONTINUOUS ACCUMULATING DEVICE AND METHOD

Apparatus for and a method of continuously depositing semiconductor alloy material characterized by stress-free bonds, tetrahedral coordination and a low density of defect states. The semiconductor material is deposited onto the substrate from energetic precursor process gas, density of states reduc...

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Bibliographische Detailangaben
1. Verfasser:	SUTANFUOODO AARU OBUSHINSUKII
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Apparatus for and a method of continuously depositing semiconductor alloy material characterized by stress-free bonds, tetrahedral coordination and a low density of defect states. The semiconductor material is deposited onto the substrate from energetic precursor process gas, density of states reducing elements, as well as dopant gas and compensating elements. Each of said energized species are discretely introduced into a deposition region for uncontaminated deposition and surface reaction on the substrate.