MANUFACTURE OF SOLID-STATE IMAGE PICKUP DEVICE

PURPOSE:To bring potential in a clearance between electrodes to the same potential as a substrate, and to stabilize charge transfer by previously doping an impurity to an insulating film formed to the lower sections of the electrodes and shaping an N-type layer in a channel section in a self-alignment manner to the electrodes through thermal diffusion. CONSTITUTION:Boron ions are implanted to channel isolation regions 12 in a substrate 1 to form high-concentration P-type regions. Arsenic is implanted in implantation energy and the quantity of implantation through which most of arsenic remains in an insulating film 2 and arsenic hardly intrudes into the silicon substrate 1 in a lower section. Arsenic atoms diffuse to the silicon substrate 1 from the insulating films 2 remaining under electrodes through hat treatment at a high temperature, and only the surfaces of the silicon substrates 1 in the lower sections of the electrodes are changed into an N-type to shape channel layers 15.