MANUFACTURE OF FIELD-EFFECT TRANSISTOR

PURPOSE:To improve the characteristics of a Schottky junction by preventing the etching action of hydrogen plasma against the surface of GaAs and etching said surface at applied power density displaying reduction action. CONSTITUTION:The characteristics of a Schottky junction are represented by an N value and the height of a barrier, and the N value is regarded as a better one with an approaching to 1 and the height of the barrier as better one as it is heightened. Both the N value and the height of the barrier are improved and uniformity is also enhanced extremely through treatment by hydrogen plasma under the conditions of applied power density of 10mW/cm . Oxygen atoms are reduced without etching the surface through treatment by hydrogen plasma at applied power density of approximately 10mW/cm to GaAs, thus resulting in no damage to the crystal of the surface.