DECODER CIRCUIT

PURPOSE:To offset leak current without increasing an occupied area, to secure a decoder output at non-selection for a long period and to prevent the multiple selection by connection a high resistance element in parallel to a precharge MOSFET and compensating the leak current. CONSTITUTION:A node x0 is made at H level by a precharged pulse phip through a P-channel FETQp. As long as any one of address input N-channel FETs Q21, Q22... is off in the nonselective state through a row address buffer X-ADB, the node x0 is brought into the H level nonselective state. In such a case, the leak current can be compensated by the P-channel FETQr of a high resistance element, which is always on in parallel with the FETQp, through the FETs Q21, Q22... Thus the leak current can be canceled out without increasing an occupied area, and a decoder output at the non-selection can be secured for a long time, thereby preventing the occurrence of erroneous operation at multiple selection.