MASK PATTERN ADJUSTMENT AND MASK TO BE USED THEREFOR

PURPOSE:To attempt the enhancement of precision in adjusting the coordinates of a pattern position and in lithographical overlapping by adjusting the stress appearing in the periphery of the mask pattern forming section made of thin film by a physical means. CONSTITUTION:A thin film 2 composed of boron nitride is adhered on the upper surface of a circular silicon frame 1. A central, square section of the film 2 constitutes the pattern forming section 2a on the surface of which a prescribed gold pattern is found, and the peripheral section surrounding the pattern forming section 2a constitutes a stress adjusting region 4 thinner than the most outside circumference. Fluid jackets 5 are installed at eight points, four corners of the pattern forming section 2a and four points close to the mid-points of each sides. In the jackets 5, fluid at a prescribed temperature is flown from the inlet opening 5a to the exit opening 5b to maintain the stress adjusting section 4 partially at a desired temperature, allowing the adjustment of expansion or shrinkage of constituent members. By this, strain occurring in the pattern forming section 2a is removed to enable exact adjustment of the coordinates of a pattern.