SEMICONDUCTOR DEVICE

PURPOSE:To house a large-sized semiconductor chip by forming a bonding pad onto the vertical inner wall of a cavity in a ceramic package through metallizing. CONSTITUTION:In a multilayer type ceramic substrate 1, there is no bonding pad section in the width direction (the horizontal direction) as seen in conventional devices, and a vertical wall surface up to a cap 5 from the base of a cavity is shaped. Leading-out wirings 6 for electrically connecting a semiconductor chip 2 and leads 4 are formed to the multilayer type ceramic substrate 1. Bonding pads 7 are shaped onto the vertical inner wall of the multilayer type ceramic substrate 1 through metallizing, and connected electrically to the leading-out wirings 6. Other ends of the leading-out wirings 6 are connected electrically to the leads 4. Since the bonding pads 7 are formed onto the vertical inner wall of the cavity in the multilayer ceramic substrate 1 through metallizing, allowance for bonding in the width direction is unnecessitated, thus increasing width in which the semiconductor chip 2 is housed, then housing a large- sized semiconductor chip 2.