SEMICONDUCTOR ELEMENT

PURPOSE:To enable to easily make a back contact by a method wherein the bump electrodes for substrate bias impression are formed on the surface of a semiconductor element several pieces in number. CONSTITUTION:Bump electrodes 20; which are connected to the back surface 1a of a semiconductor element, chip 1, at the same potential as that of the back surface 1a; are formed on the surface 1b of the chip 1 several pieces in number. The bump electrodes 20 for substrate bias impression are provided on the surface 1b along with bump electrodes 2 and the plural bump electrodes 20 are equally disposed on the surface 1b of the chip 1, whereby equal bias voltage can be impressed. In a film carrier system and a flip-chip system, the time to take for the connection of the bump electrodes 20 is constant regardless of the number of the bump electrodes 20 as the junction of the chip is performed in a batch simultaneous junction system. Moreover, there is no need to arranged the positions of the bump electrodes 20 on the periphery of the edge of the surface of the chip 1 and the positions can be arranged at any part in the extent of the surface by this way, the impression of bias voltage can be easily performed and equal bias voltage can be impressed.