CONTACT TYPE IMAGE SENSOR

PURPOSE:To improve photoconductivity by constituting a photoconductor by a CdSe group photoconductive film consisting of a CdSe simple substance or a sintered body containing CdSe. CONSTITUTION:Cr is evaporated onto a ceramic substrate 1, and picture element sections and lower wirings in matrix wirings are formed. Paste is prepared in such a manner that 0.1-5mol% CuCl2 or AgCl as a dopant, 6mol% CdCl2 as flux and 4wt% low melting-point glass are added to CdSe powdered bodies, a proper quantity of oil for adjusting viscosity is added and the whole is mixed in a ball mill. The paste is applied onto a picture element forming section for the electrode wiring substrate 1 to shape a photoconductive film 3, and crystallic powder is grown and sintered through heat treatment under the conditions of 300 deg.C/one hr and subsequently 600 deg.C/thirty min in a N2 atmosphere while being integrated by a glass binder. The picture element sections and the matrix wiring sections are coated with polyimide resin films, the resin films are cured, contact holes are formed to the matrix wiring sections, and Cr is evaporated dagain to shape upper wirings. Accordingly, the title image element, which has excellent photoconductivity and optical response properties at high speed and cost thereof is low, is acquired.