METHOD OF FORMING ACCUMULATED FILM

PURPOSE:To form an accumulated layer on a substrate in the excellent productivity by introducing both an activated speed which is produced by the decomposition of a compd. contg. silicon and halogen and the following activated speed into the inside of a film forming space which is produced from a silicon-contg. compd. performing the chemical interaction with the above-mentioned activated speed and allowing both the speeds to react chemically with each other. CONSTITUTION:An activated speed (A) is produced by decomposing a compd. contg. silicon and halogen e.g. SiF6, Si2F6, (SiF2)5, (SiF2)4 and Si3F8, etc. with the thermal energy and the light energy such as the electric energy, the heating by a heater and the infrared heating of a microwave, an RF, the low frequency and DC, etc. An activated speed (B) of a cyclic silicon halogenide or the like is produced by decomposing similary a silicon-contg. compd. performing the chemical interaction with the activated speed (A). This activated speed (A) and the activated speed (B) are separately introduced into the inside of a film forming space and allowed to perform a chemical reaction to form a reacted film on a substrate.