SOLID-STATE IMAGE PICKUP DEVICE

PURPOSE:To eliminate a blooming phenomenon and obtain an excellent image plane by making the impressed voltage to a light transmissive electrode film smaller than the impressed video voltage to the reverse surface of a photoconductive thin film and either larger than the built-in voltage of a diode provided on a semiconductor substrate or equal to its reverse voltage value. CONSTITUTION:The photoconductive thin film 5' is formed of amorphous silicon to a 500Angstrom -5mum film thickness and the light transmissive electrode film 7 is formed on SnO2 to 1,000Angstrom -2mum. A switch circuit is driven with a driving pulse with, for example, a 7V amplitude and a video bias voltage 5V is applied to a signal output line 10-2. The light transmissive electrode film is connected to the same earth voltage VT=OV with the substrate. The built-in voltage VB of the diode is about 0.7V and then VT is set to OV so as to give a margin to a lower voltage, e.g. VT at which blooming begins to occur. Thus, VT is set and the blooming is prevented up to the quantity of light about 200 times as large as in case of saturation.