GAS DETECTING ELEMENT

PURPOSE:To suppress sensitivity to miescellenous gases by dispersing at least one kind among the pulverous particles of the compound oxide of Cu, Co, Mn, Ni and Fe and alumina into a sintered layer of a metallic oxide semiconductor. CONSTITUTION:An alumina base plate 1 is provided with a platinum film heater 2 on the bottom surface and is coated thereon with a heater protective film 3. A platinum membrane electrode 4 is provided stop the plate 1 and is coated thereon with an SnO2 sintered layer 5. The layer 5 is formed by dispersing the pulverous particles 6 of the copper aluminate which is the compound oxide formed by charging active gamma alumina into an aq. copper nitrate soln. and resting the same overnight to impregnate and adsorb the gamma alumina to the powder of the metallic oxide semiconductor, then filtering the excess liquid and calcining and molding the filtrate after drying to form the paste of said aluminate and molding and sintering the paste.