SEMICONDUCTOR IC DEVICE

PURPOSE:To contrive the increase in size of through-holes without increasing wiring widths and wiring pitches, by a method wherein an intersection of wirings forming a through-hole is enlarged toward a vacant region of the plane, and the through-hole is extended to this enlarged direction. CONSTITUTION:The partial wiring 51 of the second Al layer 5 is a vacant region with no wirings that are adjacent to the lower part and therefore enlarges the intersection forming a through-hole 71 toward the vacant region. The through-hole 71 is extended toward its enlarged part 52 and contrives to enlarge its area by forming the whole in a rectangle. On the other hand, the intersection of the other wiring 53 of the second Al layer 5 with the wiring 32 of the first Al layer 3 has vacant regions above the wiring 52 and to the left of the wiring 32; therefore, the wiring 53 forms an enlarged part 33 upward. A through-hole 72 forms by extension toward above and left enlarged parts 54, 53 and contrives to increase its area by shaping the whole in L-form.