VERTICAL MODE CONTROL SEMICONDUCTOR LASER

PURPOSE:To facilitate the manufacture by holding a zone of polycrystals having different refractive indexes in a resonator to form a vertical mode control semiconductor laser. CONSTITUTION:An SiO2 stripe 12 of the prescribed size is formed by a photolithography at a suitable intermediate position of an end resonator length on a substrate 10. An N type InP buffer layer 11 and a current narrowing reverse junction 4B are grown thereon. A groove is formed by chemical etching in a direction perpendicular to the stripe 12 by a photolithography, buried and grown in the groove to grown an N type InP N type clad layer 2, an undoped InGaAsP active region 1, a P type InP P type cap layer 5 are grown. An end resonator is formed by cleavage, electrodes 6, 7 are attached to obtain a vertical control semiconductor laser of internal reflection interference type.