MANUFACTURE OF SEMICONDUCTOR LASER

PURPOSE:To avoid trouble such as an interference by half-dicing each region, which is to be cloven, in the directions rectangular to the directions of the projection of laser beams from several laser diode from the back side of a semiconductor substrate to form a groove and cleaving the substrate in the regions, which is to be cloven. CONSTITUTION:A groove 17 is shaped through half dicing along each region to be striped in the direction rectangular to a striped region 16 in the back of a wafer-shaped semiconductor substrate 10. The wafer-shaped semiconductor substrate 10 is cloven by several groove 17 and divided into bar shapes, and striped and pelletized along lines 20 to be striped in the same direction as the direction of the projection of laser beams. Since dicing surfaces 18 are made extremely rougher than cleavage planes 19, upper beams Lc projected to the diciding surfaces 18 are reflected irregularly by the surfaces 18. Accordingly, upper beams Lc fed back to a semiconductor laser return to an optical path in an optical type head by re-reflection, thus avoiding the generation of an interference.