METHOD AND DEVICE FOR MANUFACTURING THIN FILM ALUMINUM WIRING SUBSTRATE

PURPOSE:To prevent the generation of short-circuit on wirings by a method wherein a thin film Al wiring is heated up to the temperature range from the lowest temperature at which whiskers are generated and the melting point of Al or thereabout, it is slowly cooled, the internal stress is reduced, and the grown whiskers are forcibly removed. CONSTITUTION:An Si wafer, whereon a thin film Al wiring is provided, is housed in a cassette 8 and they are set on a loader 9. The wafer is automatically conveyed to a continuous heating furnace 10. The furnace 10 is maintained at the peak value of 100-600 deg.C for 10-50min, it is slowly cooled for 30-50min, the maximum value of the forced growth of Al whiskers and the internal stress is reduced and the wafer is placed in the cassette 15 of an unloader 14. Then, the above is set on a loader 16 and automatically conveyed to a whisker removing part 17. At this whisker removing part 17, the wafer is rotated, pure water is jetted out, washed by a brush, and the whiskers are removed. Then, the wafer is dried up by a low-temperature furnace 18, and it is housed in the cassette of an unloader 19. After this process is finished, no whiskers are grown even when the wafer is heated up in various processes, and no wiring short-circuit is generated, too.