SEMICONDUCTOR DEVICE

PURPOSE:To improve reliability regarding the damp-proofing of a molding package device by forming a conductor wiring metallic layer on approximately the whole surface of the uppermost layer of a device. CONSTITUTION:A conductor wiring metal 1 is pattern on a substrate 10, and a passivation film 2 is shaped on the whole surface. A nitride film 4 is formed on the whole surface through plasma CVD on a polyimide group resin 3. A contact photo-phosphorus pattern 8 is shaped, and the nitride film 4 in a contact section is removed through plasma dry etching. The polyimide group resin 3 in the contact section and a resist film 5 on the nitride film 4 are removed simultaneously through CF4+O2 group plasma. The passivation film 2 in the contact section and the nitride film 4 on the polyimide group resin 3 are removed at the same time through plasma dry etching. A conductor wiring metal 6 is shaped on the whole surface through sputtering. Lastly, a bonding wire 7 is bonded with a bonding pad area 6a in the conductor wiring metal 6 on the polyimide group resin 3 in a bonding pad shape while the bonding pad area 6a is photolithographic-etched.