PHOTOMASK MATERIAL

PURPOSE:To enable high-speed etching by laminating on a transparent glass substrate a polysilicon layer, a metallic film etchable by the dry etching method same as said layer, and another polysilicon layer. CONSTITUTION:The polysilicon layer 3 of 5-10nm thickness is formed on the transparent glass s...

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Bibliographische Detailangaben
Hauptverfasser: WATAKABE YAICHIRO, HIROSUE MASAHIRO, TANAKA KAZUHIRO
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PURPOSE:To enable high-speed etching by laminating on a transparent glass substrate a polysilicon layer, a metallic film etchable by the dry etching method same as said layer, and another polysilicon layer. CONSTITUTION:The polysilicon layer 3 of 5-10nm thickness is formed on the transparent glass substrate 1 of quartz glass or the like by the sputtering or CVD method, on this layer 3 the 60-80nm thick metallic film 4 made of Mo, W, or the like is formed by the sputtering method or the like, and further on this film 4 the 10-20nm thick polysilicon layer 5 is formed to obtain a photomask material. As the material of the film 4, whatever metal can be etched by the etching method same as that of the polysilicon layer 3 may be used, and it can be embodied by Mo, W, Ti, etc.