PHOTOMASK MATERIAL

PURPOSE:To enable high-speed etching by laminating on a transparent glass substrate a polysilicon layer, a metallic film etchable by the dry etching method same as said layer, and another polysilicon layer. CONSTITUTION:The polysilicon layer 3 of 5-10nm thickness is formed on the transparent glass s...

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Bibliographische Detailangaben
Hauptverfasser:	WATAKABE YAICHIRO, HIROSUE MASAHIRO, TANAKA KAZUHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To enable high-speed etching by laminating on a transparent glass substrate a polysilicon layer, a metallic film etchable by the dry etching method same as said layer, and another polysilicon layer. CONSTITUTION:The polysilicon layer 3 of 5-10nm thickness is formed on the transparent glass substrate 1 of quartz glass or the like by the sputtering or CVD method, on this layer 3 the 60-80nm thick metallic film 4 made of Mo, W, or the like is formed by the sputtering method or the like, and further on this film 4 the 10-20nm thick polysilicon layer 5 is formed to obtain a photomask material. As the material of the film 4, whatever metal can be etched by the etching method same as that of the polysilicon layer 3 may be used, and it can be embodied by Mo, W, Ti, etc.