N-P-N TYPE TRANSISTOR CAPABLE OF INTEGRATING

An npn silicon transistor which can be used either in the upward mode or in the downward mode and which, despite small dimensions, results in a very low base resistance. The n-type region forming its emitter in the downward mode of the transistor is provided with an electrical terminal consisting of two layers. In this connection, the lower layer adjoining the n-type region is provided by an n-doped polycrystalline silicon layer and the upper layer by a connection to one of the metals tantalum, titanium, molybdenum or tungsten. At the same time, the emitter region to be contacted has been produced using the polycrystalline silicon layer of the electrical terminal at a time subsequent to its formation from the two layers, for which purpose the polycrystalline layer of the electrical terminal has been used as a diffusion source. This measure results in very small emitter dimensions, while the metal silicide layer covering the polycrystalline silicon part of the terminal contact ensures a very low resistance Rs.