RESIST MATERIAL

PURPOSE:To enable formation of fine pattern which is strong to etching by O2 and has high accuracy by using a specific triallysilane monomer. CONSTITUTION:A resist material is synthesized from a polymer having the structural unit expressed by the formulas I -III by the radical polymn. of a triallysi...

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Bibliographische Detailangaben
Hauptverfasser:	SUZUKI SHIGEYOSHI, SAIGOU KAZUHIDE
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	PURPOSE:To enable formation of fine pattern which is strong to etching by O2 and has high accuracy by using a specific triallysilane monomer. CONSTITUTION:A resist material is synthesized from a polymer having the structural unit expressed by the formulas I -III by the radical polymn. of a triallysilane monomer. R in the formula denotes a hydrogen atom or a lower alkyl group such as methyl group, ethyl group or propyl group, or a phenyl group. If 0.1-50wt% bis-azide compd. is mixed with such polymer, the resist material has high sensitivity with UV rays. Even if the bis-azide is not used, the material has high sensitivity with electron rays, X-rays and deep UV rays. The material is effective as a mask when the material is formed into a film strong to reactive sputter etching by O2.