SUBMOUNT FOR OPTICAL SEMICONDUCTOR ELEMENT

PURPOSE:To obtain the submount which withstands high temperature and high humidity by a method wherein the barrier layer to be provided on a wiring layer is constituted by Pt. CONSTITUTION:A wiring layer 41 is formed by performing a vacuum-deposition of Au layer 37, a Ti layer 38 and a Pt barrier ma...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MIZUISHI KENICHI, CHIBA KATSUAKI, SAITOU KATSUTOSHI, TOKUDA MASAHIDE, KOBAYASHI MASAMICHI, IMAI KUNINORI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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