MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To prevent the lowering of dielectric withstand voltage of a gate oxide film by a method wherein a low temperature preparatory heat treatment is performed before a high temperature heat treatment is performed on a double-layer gate. CONSTITUTION:A polycrystalline Si film 3 is formed on the s...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SHINOHARA SHIYOUHEI, KUGIMIYA KOUICHI, OKADA SHIYOUZOU, FUKUMOTO MASANORI, YASUI JIYUUROU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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