PRODUCTION OF MAGNETIC BUBBLE MEMORY ELEMENT

PURPOSE:To simplify a production process by forming a dummy conductor pattern on an etching border part, and after completing the etching of a spacer layer, removing the dummy conductor pattern by etching. CONSTITUTION:A conductor pattern 12 is formed on an SiO2 film 11 and a dummy conductor pattern 13 is formed on a position corresponding to a border part to be the 1st spacer layer. A resist pattern 14 is formed so that its edge is superposed to the dummy conductor pattern 13. The SiO2 film 11 is removed by OF4 plasma etching to form the 1st spacer layer 15, the dummy conductor pattern 13 is removed by chemical etching and then the resist pattern 14 is removed by oxygen plasma. Since the edge of the photoresist pattern 14 is simply superposed to the dummy conductor pattern 13, the positioning accuracy is extremely loosened.