PHOTOELECTRIC CONVERSION ELEMENT

PURPOSE:To contrive to improve the spectral sensitivity characteristic in a region of long wavelengths by using an amorphous hydrogenated silicon-germaniun layer in part of a photoconductor layer. CONSTITUTION:The titled element is formed by sandwiching an amorphous hydrogenated silicon-germanium layer 4 as the photoconductor layer between a chromium electrode 2, as a metallic electrode, formed on an insulating glass substrate 1 and an indium-tin oxide electrode 3 a photo transmitting electrode. As a result, the peak of sensitivity transfers from 620nm to 700nm toward the side of long wavelengths, and the sensitivity characteristic in 700-850nm of near infrared rays improves.