SYNTHESIS OF DIAMOND

PURPOSE:To produce a high-quality diamond, by maintaining the substrate at a proper temperature in the synthesis of diamond by the chemical vapor deposition process using the electrodeless microwave discharge. CONSTITUTION:Diamond is deposited on the substrate 6 by the electrodeless microwave discha...

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Bibliographische Detailangaben
Hauptverfasser:	SATOU YOUICHIROU, KAMO MUTSUKAZU, SEDAKA NOBUO, MATSUMOTO SEIICHIROU
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE:To produce a high-quality diamond, by maintaining the substrate at a proper temperature in the synthesis of diamond by the chemical vapor deposition process using the electrodeless microwave discharge. CONSTITUTION:Diamond is deposited on the substrate 6 by the electrodeless microwave discharge of the mixed gas of hydrogen and hydrocarbon. In the above process, (i) the electrodeless discharge (about 300MHz-1,000MHz, about 200-5,000W power) generated by the microwave oscillator 3 is introduced through the wave guide 4 into the reaction chamber 5 to excite the gas, the (ii) the diamond is formed on the substrate 6 while keeping the temperature of the substrate 6 at 300-1,300 deg.C by passing water, etc. through the hollow part of the table 7 (1 is raw material gas supplying apparatus, 2 is vacuum pump).