SOLID-STATE IMAGE PICKUP ELEMENT

PURPOSE:To obtain a high signal output by inputting a change of the surface potential under an MOS electrode, which is generated by a change of the photoelectric charge stored in a depletion layer formed under the MOS electrode through which light is transmitted, to the gate of an MOST provided for every picture element. CONSTITUTION:In the solid-state image pickup element using a photoelectric transducer, a voltage-transformed voltage is received by the gate of a detecting MOST 14 as it is, and a signal is amplified by the detecting MOST, and therefore, the signal output is about 30-100 times as high as the signal output of a conventional element. As the result, a high output of 100-300mV is obtained, and the S/N ratio is improved considerably. Further, the signal processing is easy because the output signal itself is held in a certain value during a scanning period.