MANUFACTURE OF SILICON WAFER

PURPOSE:To obtain silicon wafers enabled to easily take out from a container and provided with a smooth surface by furthermore covering the container made of one or more kinds from among silicon nitride, boron nitride, and quarz with a powdery parting agent of said materials. CONSTITUTION:An interna...

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Bibliographische Detailangaben
Hauptverfasser: HAGA MASAKATSU, YOSHINO HISASHI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PURPOSE:To obtain silicon wafers enabled to easily take out from a container and provided with a smooth surface by furthermore covering the container made of one or more kinds from among silicon nitride, boron nitride, and quarz with a powdery parting agent of said materials. CONSTITUTION:An internal wall surface of a container 1 made of one or more kinds from among silicon nitride, boron nitride, and quarz is covered with a powdery parting agent 3 made of materials of one or more kinds from among silicon nitride, boron nitride, and quarz. Next, silicon powder 2 is put in a concave body 1a surrounded by a high-frequency heating body 4 and a convex covering body 1b and the high-frequency heating body 4 are placed on the concave body 1a so as to engage the concave body with the convex covering body, to heat the silicon powder 2 in an argon atmosphere. The silicon powder 2 is fused by heat application and pressured by the self-weights of the convex body 1b and the upper high-frequency heating body 4 to form a thin disk. Polycrystalline silicon wafers are taken out of the container 1 after heat dissipation.