JPS6042625B

PURPOSE:To prevent an inversion layer formation time from being late and a dynamic range from being narrow by thinning the thichness of the insulating film on the semiconductor substrate in channel parts far from the driving pulse feeding part of a transfer electrode in comparison with that in channel parts near to the driving pulse feeding part. CONSTITUTION:In a charge coupled device where plural transfer electrodes 3 are provided in paralle through insulating film 2 on the surface of semiconductor substrate 1, the thickness of insulating film 2 on semiconductor substrate 1 in channel part 6 far from driving pluse feeding parts 4 and 5, so that the time for forming inversion layers can be prevented from being late and the dynamic range can be prevented from being narrow.