METHOD AND DEVICE FOR GROWING GALLIUM ARSENIDE SINGLE CRYSTAL
PURPOSE:To prevent contamination of a crystal with Si from a quartz boat with a titled growing method using the Bridgeman's methode of horizontal two-temp. by specifying the connection of the ampoules on the high- and low-temp. sides of a reaction tube and the temp. region of furnace heaters. C...
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| creator | KASHIYANAGI YUUZOU OZAWA SHIYOUICHI AZUMA KATSUMI KIJIMA TAKASHI |
| description | PURPOSE:To prevent contamination of a crystal with Si from a quartz boat with a titled growing method using the Bridgeman's methode of horizontal two-temp. by specifying the connection of the ampoules on the high- and low-temp. sides of a reaction tube and the temp. region of furnace heaters. CONSTITUTION:A temp. gradient part L2 kept at about |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPS6042291A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPS6042291A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPS6042291A3</originalsourceid><addsrcrecordid>eNrjZLD1dQ3x8HdRcPRzUXBxDfN0dlVw8w9ScA_yD_f0c1dwd_Tx8Qz1VXAMCnb183RxVQgGivq4KjgHRQaHOPrwMLCmJeYUp_JCaW4GBTfXEGcP3dSC_PjU4oLE5NS81JJ4r4BgMwMTIyNLQ0djIpQAAMsrKYw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD AND DEVICE FOR GROWING GALLIUM ARSENIDE SINGLE CRYSTAL</title><source>esp@cenet</source><creator>KASHIYANAGI YUUZOU ; OZAWA SHIYOUICHI ; AZUMA KATSUMI ; KIJIMA TAKASHI</creator><creatorcontrib>KASHIYANAGI YUUZOU ; OZAWA SHIYOUICHI ; AZUMA KATSUMI ; KIJIMA TAKASHI</creatorcontrib><description>PURPOSE:To prevent contamination of a crystal with Si from a quartz boat with a titled growing method using the Bridgeman's methode of horizontal two-temp. by specifying the connection of the ampoules on the high- and low-temp. sides of a reaction tube and the temp. region of furnace heaters. CONSTITUTION:A temp. gradient part L2 kept at about <=1,250 deg.C and a high- temp. region L4 where the temp. in a melt part 43 is maintained at around 1,250 deg.C above the m.p. of GaAs are formed by a heater 40 and the respective regions are made longer than the length L1 of a quartz boat 45. On the other hand a low-temp. region L5 where metallic As is kept at about 610 deg.C is formed by a heater 41 and quartz ampoules 44, 46 on the high- and low-temp. sides are connected by a coil-shaped quartz tube 47. The GaAs melt in the part 43 is seeded 51 and the reaction tube is forcibly moved relatively with the furnace to move the melt to the gradient part L2 set at 1-10 deg.C/cm thereby moving a solid- liquid boundary 52 and frowing a GaAs single crystal. The temp. at the left end 53 of the ampoule 44 is decreased by the part L2 on moving of the boundary 52, by which the reaction of As and Ga2O is accelerated but the temp. gradient is gentle and therefore the activity of Si in GaAs does not increase so much.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1985</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19850306&DB=EPODOC&CC=JP&NR=S6042291A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19850306&DB=EPODOC&CC=JP&NR=S6042291A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KASHIYANAGI YUUZOU</creatorcontrib><creatorcontrib>OZAWA SHIYOUICHI</creatorcontrib><creatorcontrib>AZUMA KATSUMI</creatorcontrib><creatorcontrib>KIJIMA TAKASHI</creatorcontrib><title>METHOD AND DEVICE FOR GROWING GALLIUM ARSENIDE SINGLE CRYSTAL</title><description>PURPOSE:To prevent contamination of a crystal with Si from a quartz boat with a titled growing method using the Bridgeman's methode of horizontal two-temp. by specifying the connection of the ampoules on the high- and low-temp. sides of a reaction tube and the temp. region of furnace heaters. CONSTITUTION:A temp. gradient part L2 kept at about <=1,250 deg.C and a high- temp. region L4 where the temp. in a melt part 43 is maintained at around 1,250 deg.C above the m.p. of GaAs are formed by a heater 40 and the respective regions are made longer than the length L1 of a quartz boat 45. On the other hand a low-temp. region L5 where metallic As is kept at about 610 deg.C is formed by a heater 41 and quartz ampoules 44, 46 on the high- and low-temp. sides are connected by a coil-shaped quartz tube 47. The GaAs melt in the part 43 is seeded 51 and the reaction tube is forcibly moved relatively with the furnace to move the melt to the gradient part L2 set at 1-10 deg.C/cm thereby moving a solid- liquid boundary 52 and frowing a GaAs single crystal. The temp. at the left end 53 of the ampoule 44 is decreased by the part L2 on moving of the boundary 52, by which the reaction of As and Ga2O is accelerated but the temp. gradient is gentle and therefore the activity of Si in GaAs does not increase so much.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1985</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD1dQ3x8HdRcPRzUXBxDfN0dlVw8w9ScA_yD_f0c1dwd_Tx8Qz1VXAMCnb183RxVQgGivq4KjgHRQaHOPrwMLCmJeYUp_JCaW4GBTfXEGcP3dSC_PjU4oLE5NS81JJ4r4BgMwMTIyNLQ0djIpQAAMsrKYw</recordid><startdate>19850306</startdate><enddate>19850306</enddate><creator>KASHIYANAGI YUUZOU</creator><creator>OZAWA SHIYOUICHI</creator><creator>AZUMA KATSUMI</creator><creator>KIJIMA TAKASHI</creator><scope>EVB</scope></search><sort><creationdate>19850306</creationdate><title>METHOD AND DEVICE FOR GROWING GALLIUM ARSENIDE SINGLE CRYSTAL</title><author>KASHIYANAGI YUUZOU ; OZAWA SHIYOUICHI ; AZUMA KATSUMI ; KIJIMA TAKASHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS6042291A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1985</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>KASHIYANAGI YUUZOU</creatorcontrib><creatorcontrib>OZAWA SHIYOUICHI</creatorcontrib><creatorcontrib>AZUMA KATSUMI</creatorcontrib><creatorcontrib>KIJIMA TAKASHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KASHIYANAGI YUUZOU</au><au>OZAWA SHIYOUICHI</au><au>AZUMA KATSUMI</au><au>KIJIMA TAKASHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD AND DEVICE FOR GROWING GALLIUM ARSENIDE SINGLE CRYSTAL</title><date>1985-03-06</date><risdate>1985</risdate><abstract>PURPOSE:To prevent contamination of a crystal with Si from a quartz boat with a titled growing method using the Bridgeman's methode of horizontal two-temp. by specifying the connection of the ampoules on the high- and low-temp. sides of a reaction tube and the temp. region of furnace heaters. CONSTITUTION:A temp. gradient part L2 kept at about <=1,250 deg.C and a high- temp. region L4 where the temp. in a melt part 43 is maintained at around 1,250 deg.C above the m.p. of GaAs are formed by a heater 40 and the respective regions are made longer than the length L1 of a quartz boat 45. On the other hand a low-temp. region L5 where metallic As is kept at about 610 deg.C is formed by a heater 41 and quartz ampoules 44, 46 on the high- and low-temp. sides are connected by a coil-shaped quartz tube 47. The GaAs melt in the part 43 is seeded 51 and the reaction tube is forcibly moved relatively with the furnace to move the melt to the gradient part L2 set at 1-10 deg.C/cm thereby moving a solid- liquid boundary 52 and frowing a GaAs single crystal. The temp. at the left end 53 of the ampoule 44 is decreased by the part L2 on moving of the boundary 52, by which the reaction of As and Ga2O is accelerated but the temp. gradient is gentle and therefore the activity of Si in GaAs does not increase so much.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | METHOD AND DEVICE FOR GROWING GALLIUM ARSENIDE SINGLE CRYSTAL |
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