METHOD AND DEVICE FOR GROWING GALLIUM ARSENIDE SINGLE CRYSTAL

PURPOSE:To prevent contamination of a crystal with Si from a quartz boat with a titled growing method using the Bridgeman's methode of horizontal two-temp. by specifying the connection of the ampoules on the high- and low-temp. sides of a reaction tube and the temp. region of furnace heaters. C...

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Hauptverfasser:	KASHIYANAGI YUUZOU, OZAWA SHIYOUICHI, AZUMA KATSUMI, KIJIMA TAKASHI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:	PURPOSE:To prevent contamination of a crystal with Si from a quartz boat with a titled growing method using the Bridgeman's methode of horizontal two-temp. by specifying the connection of the ampoules on the high- and low-temp. sides of a reaction tube and the temp. region of furnace heaters. CONSTITUTION:A temp. gradient part L2 kept at about