JPS6041039B

PURPOSE:To obtain a smooth thin film having a large area, little defects and no segregation in the composition, by forming under prescribed conditions an oxide single crystal seed at one end of a thin amorphous oxide film having a specified composition and by carrying out successive recrystallizatio...

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Bibliographische Detailangaben
Hauptverfasser:	HASHIMOTO SUSUMU, SHIMANUKI SENJI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE:To obtain a smooth thin film having a large area, little defects and no segregation in the composition, by forming under prescribed conditions an oxide single crystal seed at one end of a thin amorphous oxide film having a specified composition and by carrying out successive recrystallization from the end at a local temp. gradient. CONSTITUTION:An oxide having a chemical composition represented by a formula Pb5Ge3-xSixO11 (0