THICK FILM HYBRID IC
PURPOSE:To produce the titled hybrid IC easily without fail by a method wherein conductive patterns for connecting each terminal of thick film element are divided at specified interval and after measuring and adjusting the element, chip- type mold parts with dammy electrode bridge over the patterns....
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | PURPOSE:To produce the titled hybrid IC easily without fail by a method wherein conductive patterns for connecting each terminal of thick film element are divided at specified interval and after measuring and adjusting the element, chip- type mold parts with dammy electrode bridge over the patterns. CONSTITUTION:AgPd conductive patterns 12-17 and resistors 18-20 are pinted and baked on an alumina substrate 11. The patterns 12-15 are respectively probed 22 by a measuring instrument to measure resistors independently for trimming. After finishing adjustment, other circuit parts are fixed on the sunstrate 11 to be soldered os that e.g. electrodes 26, 27 of a chip-type mold part 23 (diode part) may bridge over the conductive patterns 16, 17 likewise a dammy electrode 28 may bridge over a specified interval (about 300mum) provided on the opposing ends A, B of the conductive patterns 12, 13 to complete the fixing of the part 23 and the connection of closed circuit between resistors. In such a constitution, wide intervals between conductive patterns may be connected easily without fail after completion of trimming to produce a thick film hybrid IC. |
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