PLASMA PROCESSING DEVICE

PURPOSE:To prevent the excessive enhancement of source capacity by restraining the excessive application of electric power to electrodes by increasing an areal ratio. CONSTITUTION:Electrodes 20 are arranged so as to surround a baffle 31 with center of a processing chamber 30 as the approximate cente...

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Bibliographische Detailangaben
Hauptverfasser: NAGATOMO KATSUAKI, OGAWA YOSHIFUMI, YAMAMOTO HIDEJI, NISHIDA KATSUYASU, KUDOU KATSUYOSHI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PURPOSE:To prevent the excessive enhancement of source capacity by restraining the excessive application of electric power to electrodes by increasing an areal ratio. CONSTITUTION:Electrodes 20 are arranged so as to surround a baffle 31 with center of a processing chamber 30 as the approximate center and these are connected to a high-frequency power source 60 separately through a comprehensive impedance adjusting unit 61. The processing gas is supplied to a gas supply path of an electrode shaft 12 through a gas supply pipe 50 and is emitted from emission holes of a gas dispersing chamber toward a sample put on an electrode plate 21. If the high-frequency power source 60 applies the predetermined high- frequency power to the respective electrodes 20, discharge is generated between the electrode plate 11 of an opposite electrode 10 and the electrode plates 21 of electrodes 20, thereby making the processing gas into plasma. At the same time, the sample is processed. Because the area of electrode plate 21 is small, which is the smallest one to be required, the areal ratio can be increased.