SEMICONDUCTOR LIGHT-RECEIVING ELEMENT

PURPOSE:To improve performance by using one electrode in two separate light- receiving elements in common and superposing and bonding it. CONSTITUTION:Two kinds of crystals in which N type InP buffer layers 19 and an N type photosensitive layer 5 or 7 are laminated while using N type InP as substrates 12 are grown. Passivation films 14 are formed onto the surfaces of the photosensitive layers, holes are bored, and P type regions 11 are obtained. The thickness of the crystals is adjusted, P side electrodes 15 and N side electrodes 13 are shaped, and a dielectric multilayer film 17 transmitting beams, which have high reflectivity to a specific wavelength and wavelengths longer than the wavelength, is formed to a window section shaped to the N side electrode in the crystal. An antireflection film 18 to beams having some specific wavelength is formed in a window shaped to the N side electrode of one crystal. The N side electrodes 13 for two diodes are bonded mutually by a low melting-point metal 16 such as an Au-Sn alloy. Accordingly, manufacture is facilitated while high performance can be displayed.