SEPARATION OF REACTANT FROM SILICON

In a method for separating solid reaction products from silicon produced in an arc furnace, molten silicon produced in the arc furnace in a reduction of SiO2 and carbon is filtered through a heated layer composed of SiC/Si after a so-called holding phase at a temperature in a region above a melting...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	FURIIDORITSUHI UIRUHERUMU SHIYURUTSUE, FUUBERUTO AURITSUHI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	In a method for separating solid reaction products from silicon produced in an arc furnace, molten silicon produced in the arc furnace in a reduction of SiO2 and carbon is filtered through a heated layer composed of SiC/Si after a so-called holding phase at a temperature in a region above a melting point of the silicon. The layer is preferably fashioned as a bottom plate of a crucible. The melt has eliminated from it SiO2 and SiC particles contained therein. The method serves for the production of silicon for solar cells. Due to the separation of SiO2 and SiC out of the molten silicon, an efficiency of above 10% is achieved in the solar cells fabricated from this material.