FORMATION OF INTERNAL WIRING OF SEMICONDUCTOR DEVICE

PURPOSE:To form a flat wiring structure using various types of conductive materials by a method wherein the through hole, to be used for connection with the lower layer formed on an interlayer insulating film, is filled up and a conductive layer is deposited isotropically and non-selectively in excess of the film thickness where a plane surface will be made flat. CONSTITUTION:A molybdenum-silicide film 42 is formed on a part of a P type silicon substrate 41 using the thermal reaction of a molybdenum film and the substrate 41. Then, after a silicon dioxide film 44 has been deposited, a rectangular through hole 45 is perforated. Subsequently, the hole 45 is filled up by depositing an aluminum film in such a manner that the thickness on the insulating 44 becomes 0.8mum, and an aluminum wiring pattern 46 having flat surface is formed. Then, an aluminum wiring pattern 46' is formed using photoetching technique. As a result, a flat wiring structure having excellent uniformity and reproducibility can be formed using various kinds of conductive materials without increasing the number of process.