MANUFACTURE OF SEMICONDUCTOR DEVICE
PURPOSE:To reduce number of alignment marks per actual tip and increase the yield rate of obtaining tips per wafer by using a method of regarding plural number of tips as one tip. CONSTITUTION:When an interval of alignment marks in a device is assumed as L, each width of plural number of semiconduct...
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creator | MIYOSHI HIROKAZU NISHIMOTO AKIRA NAKAJIMA MORIYOSHI TAKAHASHI HIROSHIGE ANDOU AKIRA MATSUNO YOUKO |
description | PURPOSE:To reduce number of alignment marks per actual tip and increase the yield rate of obtaining tips per wafer by using a method of regarding plural number of tips as one tip. CONSTITUTION:When an interval of alignment marks in a device is assumed as L, each width of plural number of semiconductor tips to be continuously formed in a line on a semiconductor wafer is assumed as l0 and the width of the alignment mark is assumed as DELTA, L=nl+W [n is a positive integer, l0 |
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CONSTITUTION:When an interval of alignment marks in a device is assumed as L, each width of plural number of semiconductor tips to be continuously formed in a line on a semiconductor wafer is assumed as l0 and the width of the alignment mark is assumed as DELTA, L=nl+W [n is a positive integer, l0<W<(l-DELTA)] is made to be obtained considering l=n0l0 (n0 is a positive integer of 2 or more.). 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If number of sorts of the alignment marks is not greater than the number of tips in a tip group, number of alignment marks per tip can be kept 2 or less whereby the area occupied by the alignment marks can be reduced.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1985</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD2dfQLdXN0DgkNclXwd1MIdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfFeAcFmBkZGxkYGjsZEKAEAJ6UinQ</recordid><startdate>19850204</startdate><enddate>19850204</enddate><creator>MIYOSHI HIROKAZU</creator><creator>NISHIMOTO AKIRA</creator><creator>NAKAJIMA MORIYOSHI</creator><creator>TAKAHASHI HIROSHIGE</creator><creator>ANDOU AKIRA</creator><creator>MATSUNO YOUKO</creator><scope>EVB</scope></search><sort><creationdate>19850204</creationdate><title>MANUFACTURE OF SEMICONDUCTOR DEVICE</title><author>MIYOSHI HIROKAZU ; NISHIMOTO AKIRA ; NAKAJIMA MORIYOSHI ; TAKAHASHI HIROSHIGE ; ANDOU AKIRA ; MATSUNO YOUKO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS6022320A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1985</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MIYOSHI HIROKAZU</creatorcontrib><creatorcontrib>NISHIMOTO AKIRA</creatorcontrib><creatorcontrib>NAKAJIMA MORIYOSHI</creatorcontrib><creatorcontrib>TAKAHASHI HIROSHIGE</creatorcontrib><creatorcontrib>ANDOU AKIRA</creatorcontrib><creatorcontrib>MATSUNO YOUKO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MIYOSHI HIROKAZU</au><au>NISHIMOTO AKIRA</au><au>NAKAJIMA MORIYOSHI</au><au>TAKAHASHI HIROSHIGE</au><au>ANDOU AKIRA</au><au>MATSUNO YOUKO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MANUFACTURE OF SEMICONDUCTOR DEVICE</title><date>1985-02-04</date><risdate>1985</risdate><abstract>PURPOSE:To reduce number of alignment marks per actual tip and increase the yield rate of obtaining tips per wafer by using a method of regarding plural number of tips as one tip. CONSTITUTION:When an interval of alignment marks in a device is assumed as L, each width of plural number of semiconductor tips to be continuously formed in a line on a semiconductor wafer is assumed as l0 and the width of the alignment mark is assumed as DELTA, L=nl+W [n is a positive integer, l0<W<(l-DELTA)] is made to be obtained considering l=n0l0 (n0 is a positive integer of 2 or more.). If number of sorts of the alignment marks is not greater than the number of tips in a tip group, number of alignment marks per tip can be kept 2 or less whereby the area occupied by the alignment marks can be reduced.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
title | MANUFACTURE OF SEMICONDUCTOR DEVICE |
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