PRODUCTION OF TRANSPARENT CONDUCTIVE FILM

PURPOSE:To form a transparent conductive film consisting of indium tin oxide (ITO) having low resistance with good reproducibility by using a mass spectrometric device in such a way that the specified mass spectral ratio between indium and indium oxide is maintained at all times during sputtering. C...

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Bibliographische Detailangaben
Hauptverfasser:	SATOU KIYOTAKE, YOSHIMI TAKUYA, OKAMOTO KENJI, WAKITANI MASAYUKI, MIURA TERUNOBU
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE:To form a transparent conductive film consisting of indium tin oxide (ITO) having low resistance with good reproducibility by using a mass spectrometric device in such a way that the specified mass spectral ratio between indium and indium oxide is maintained at all times during sputtering. CONSTITUTION:A mass spectrometric device 2 is connected to a chamber 1 of a sputtering device and the spectral intensities of the oxide of indium and indium are taken out of the device 2 and the ratio thereof is monitored in the stage of producing an ITO film by reactive two-pole DC sputtering. A control circuit 4 for controlling a constant current source 5 according to the result thereof is provided and sputtering is executed while the specified ratio of the indium/indium oxide is maintained. The ITO film having low resistance is produced with good reproducibility by the above-mentioned method and the yield is improved.