PLASMA TREATMENT EQUIPMENT

PURPOSE:To increase the radical concentration of a gas for treatment by a method wherein a surface of each of the specimens arranged in a multiplicity of stages is faced by a high frequency electrode and the other surface of the same is faced by a ground electrode for the reduction of distance between each of the high frequency electrodes, ground electrodes, and specimens. CONSTITUTION:A casette 10 accommodates specimens, for example wafers 20 with their patterns formed by plasma-etching, in eight stages arranged one upon the other. When the movable end of an arm 31 is caused to arc toward the casette 10, a high frequency electrode 30 located outside the casette 10 is moved to occupy a position facing one side of a wafer 20. When the movable end of an arm 41 is caused to arc toward the casette 10, a ground electrode 40 located outside the casette 10 is moved to occupy a position facing the other side of the wafer 20. A high frequency power source 60 then supplies high frequency power to the high frequency electrode 30, the gas under treatment is turned into plasmic state by generating glow discharge across the high frequency electrode 30 and ground electrode 40 sandwitching the wafer 20. The plasma incinerates and then removes the ashed resist being coated on the etched surface of the wafer 20.