STYRENE TYPE POLYMER HAVING SILICON ATOMS

PURPOSE:To obtain a resist material high in resistance to O2-using ion etching by using a specified styrene type polymer having silicon atoms. CONSTITUTION:A styrene deriv. polymer having Si atoms used for a resist material has a structural unit represented by the formula in which A is a monomer uni...

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1. Verfasser:	SAIGOU KAZUHIDE
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	PURPOSE:To obtain a resist material high in resistance to O2-using ion etching by using a specified styrene type polymer having silicon atoms. CONSTITUTION:A styrene deriv. polymer having Si atoms used for a resist material has a structural unit represented by the formula in which A is a monomer unit polymerized from an ethylenically unsatd. compd., R is lower alkyl, X and Y are each a molar fraction. Such a polymer can be prepared, e.g., by using dialkylsilylstyrene and an ethylenically unsatd. monomer, and a radical polymn. initiator, and this polymer has strong resistance to ion etching using O2, and it exhibits good resistance by using it for forming, e.g., an about 200nm thick upper pattern-forming layer of a 2-layer resist. As a result, a micropattern can be formed by using it for an IC, a bubble memory element, etc.