FORMATION OF CONTACT ELECTRODE

PURPOSE:To fill holes with conductive material without any gap and without causing shadow effect for obtaining a flat conductive film on an SiO2 film, by combining bias spattering and a two-layer structure consisting of two different conductive films having different chemical resistance. CONSTITUTION:An SiO2 film 502 is produced on an Si substrate 501 and a plurality of contact holes are formed in the film. An Mo film 503 is adhered to fill the holes in about 90% of the depth thereof by means of bias spattering that is conditioned to prevent shadow effects. Subsequently, the inclines 504 on the hole edges of the film 503 adhered outside the holes are retreated by means of bias spattering that is conditioned such that the effective adhesion rate of the Mo film on the flat surface is zero, while at the same time the Mo films adhered on about 10% of the side walls within the holes are removed by etching. After that, an Mo silicide film 505 having chemical resistance different from that of Mo is adhered on the whole surface while filling the holes, by means of bias spattering that is conditioned to prevent the shadow effect. Films 505 and 502 located outside the holes are then removed.