POSITIVE TYPE RESIST MATERIAL
PURPOSE:To adapt the present resist to a far UV exposure system and to enhance dry etching resistance and resolution by incorporating a methyl methacrylate-methacrylic acid copolymer and a specified o-nitrobenzyloxysilane deriv. CONSTITUTION:The present resist material contains as an essential compo...
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| creator | OONISHI YASUNOBU HAYASE SHIYUUJI ISORI KUNIHIRO |
| description | PURPOSE:To adapt the present resist to a far UV exposure system and to enhance dry etching resistance and resolution by incorporating a methyl methacrylate-methacrylic acid copolymer and a specified o-nitrobenzyloxysilane deriv. CONSTITUTION:The present resist material contains as an essential component a copolymer of methyl methacrylate and methacrylic acid [P(MMA-MAA)] and an o-nitrobenziloxysilane (o-NBOS) deriv. represented by the shown formula in which R -R are each H, halogen, vinyl, allyl, 1-10C alkyl, alkoxy, or the like; R is H, 1-10C alkyl, phenyl, or the like; each of R -R is H, nitro, cyano, hydroxy, mercapto, 1-5C alkyl, allyl, or the like; and 0 |
| format | Patent |
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CONSTITUTION:The present resist material contains as an essential component a copolymer of methyl methacrylate and methacrylic acid [P(MMA-MAA)] and an o-nitrobenziloxysilane (o-NBOS) deriv. represented by the shown formula in which R -R are each H, halogen, vinyl, allyl, 1-10C alkyl, alkoxy, or the like; R is H, 1-10C alkyl, phenyl, or the like; each of R -R is H, nitro, cyano, hydroxy, mercapto, 1-5C alkyl, allyl, or the like; and 0<=p, q, r<=3. Such incorporation of o-NBOS in P(MMA+MAA) renders the resist film hardly soluble in alkali, and again soluble by patternwise exposing it to far UV rays. As a result, the present method permits a positive image superior in resolution and improved in dry etching resistance to be obtained.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; AUXILIARY PROCESSES IN PHOTOGRAPHY ; CHEMISTRY ; CINEMATOGRAPHY ; COMPOSITIONS BASED THEREON ; COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; METALLURGY ; ORGANIC MACROMOLECULAR COMPOUNDS ; ORIGINALS THEREFOR ; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES ; PHYSICS ; THEIR PREPARATION OR CHEMICAL WORKING-UP ; USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS</subject><creationdate>1985</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19850927&DB=EPODOC&CC=JP&NR=S60189741A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19850927&DB=EPODOC&CC=JP&NR=S60189741A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OONISHI YASUNOBU</creatorcontrib><creatorcontrib>HAYASE SHIYUUJI</creatorcontrib><creatorcontrib>ISORI KUNIHIRO</creatorcontrib><title>POSITIVE TYPE RESIST MATERIAL</title><description>PURPOSE:To adapt the present resist to a far UV exposure system and to enhance dry etching resistance and resolution by incorporating a methyl methacrylate-methacrylic acid copolymer and a specified o-nitrobenzyloxysilane deriv. CONSTITUTION:The present resist material contains as an essential component a copolymer of methyl methacrylate and methacrylic acid [P(MMA-MAA)] and an o-nitrobenziloxysilane (o-NBOS) deriv. represented by the shown formula in which R -R are each H, halogen, vinyl, allyl, 1-10C alkyl, alkoxy, or the like; R is H, 1-10C alkyl, phenyl, or the like; each of R -R is H, nitro, cyano, hydroxy, mercapto, 1-5C alkyl, allyl, or the like; and 0<=p, q, r<=3. Such incorporation of o-NBOS in P(MMA+MAA) renders the resist film hardly soluble in alkali, and again soluble by patternwise exposing it to far UV rays. 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| language | eng |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR AUXILIARY PROCESSES IN PHOTOGRAPHY CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES PHYSICS THEIR PREPARATION OR CHEMICAL WORKING-UP USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS |
| title | POSITIVE TYPE RESIST MATERIAL |
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