POSITIVE TYPE RESIST MATERIAL

PURPOSE:To adapt the present resist to a far UV exposure system and to enhance dry etching resistance and resolution by incorporating a methyl methacrylate-methacrylic acid copolymer and a specified o-nitrobenzyloxysilane deriv. CONSTITUTION:The present resist material contains as an essential compo...

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Bibliographische Detailangaben
Hauptverfasser:	OONISHI YASUNOBU, HAYASE SHIYUUJI, ISORI KUNIHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR AUXILIARY PROCESSES IN PHOTOGRAPHY CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES PHYSICS THEIR PREPARATION OR CHEMICAL WORKING-UP USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS
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Beschreibung
Zusammenfassung:	PURPOSE:To adapt the present resist to a far UV exposure system and to enhance dry etching resistance and resolution by incorporating a methyl methacrylate-methacrylic acid copolymer and a specified o-nitrobenzyloxysilane deriv. CONSTITUTION:The present resist material contains as an essential component a copolymer of methyl methacrylate and methacrylic acid [P(MMA-MAA)] and an o-nitrobenziloxysilane (o-NBOS) deriv. represented by the shown formula in which R -R are each H, halogen, vinyl, allyl, 1-10C alkyl, alkoxy, or the like; R is H, 1-10C alkyl, phenyl, or the like; each of R -R is H, nitro, cyano, hydroxy, mercapto, 1-5C alkyl, allyl, or the like; and 0