METHOD FOR PULLING UP SINGLE CRYSTAL AND APPARATUS THEREFOR

PURPOSE:To control freely the temperature distribution in a furnace and manufacture efficiently a semiconductor single crystal of high quality, by using a heating means consisting of a combination of a pair of the upper and lower heating elements, capable of respective independent voltage application in variable mutual positions. CONSTITUTION:Basic elements (A) in the form, consisting of three sides a square, and having a curved surface to be a cylindrical shape on joining are mutually joined at the ends to form the upper heating element 47 consisting of a zigzag cylinder wholly. The protruding part of the lower heating element 48 constituted of similarly to the upper heating element 47 is engaged with the recessed part of the upper heating element 47 with a distance (a) therebetween to form a heating means [basic elements in the form of two sides of a triangle or half circumference of a semicircle may be used as the basic heating elements (A)]. A semiconductor single crystal melt in a crucible is heated with the above-mentioned heating means to manufacture a single crystal by the Czochralski method. In the process, supply power to the upper and the lower heating elements (A) and mutual distance therebetween are adjusted to control the temperature distribution in the crucible.